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Theory of drain noise in high electron mobility transistors based on real-space transfer

Esho, Iretomiwa and Choi, Alexander Y. and Minnich, Austin J. (2022) Theory of drain noise in high electron mobility transistors based on real-space transfer. Journal of Applied Physics, 131 (8). Art. No. 085111. ISSN 0021-8979. doi:10.1063/5.0069352.

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High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the origin of the gate noise, that of drain noise is a topic of debate. Here, we report a theory of drain noise as a type of partition noise arising from real-space transfer of hot electrons from the channel to the barrier. The theory accounts for the magnitude and dependencies of the drain temperature and suggests strategies to realize devices with lower noise figure.

Item Type:Article
Related URLs:
URLURL TypeDescription Paper
Esho, Iretomiwa0000-0002-3746-6571
Choi, Alexander Y.0000-0003-2006-168X
Minnich, Austin J.0000-0002-9671-9540
Additional Information:© 2022 Published under an exclusive license by AIP Publishing. Submitted: 30 August 2021; Accepted: 26 January 2022; Published Online: 28 February 2022. The authors thank Jan Grahn and Junjie Li at Chalmers University of Technology for useful discussions and providing the data shown in Fig. 1. I.E. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1745301. A.Y.C. and A.J.M. were supported by the National Science Foundation (NSF) under Grant No. 1911220. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation. The authors have no conflicts to disclose. Data Availability: The data that support the findings of this study are available from the corresponding author upon reasonable request.
Funding AgencyGrant Number
NSF Graduate Research FellowshipDGE-1745301
Issue or Number:8
Record Number:CaltechAUTHORS:20210831-204003339
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Official Citation:Iretomiwa Esho, Alexander Y. Choi, and Austin J. Minnich , "Theory of drain noise in high electron mobility transistors based on real-space transfer", Journal of Applied Physics 131, 085111 (2022)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:110664
Deposited By: George Porter
Deposited On:01 Sep 2021 14:33
Last Modified:09 Mar 2022 18:11

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