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Theory of drain noise in high electron mobility transistors based on real-space transfer

Esho, Iretomiwa and Choi, Alexander Y. and Minnich, Austin J. (2021) Theory of drain noise in high electron mobility transistors based on real-space transfer. . (Unpublished)

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High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the origin of the gate noise, that of drain noise is a topic of debate. Here, we report a theory of drain noise as a type of partition noise arising from real-space transfer of hot electrons from the channel to the barrier. The theory accounts for the magnitude and dependencies of the drain temperature and suggests strategies to realize devices with lower noise figure.

Item Type:Report or Paper (Discussion Paper)
Related URLs:
URLURL TypeDescription Paper
Esho, Iretomiwa0000-0002-3746-6571
Choi, Alexander Y.0000-0003-2006-168X
Minnich, Austin J.0000-0002-9671-9540
Additional Information:The authors thank Jan Grahn and Junjie Li at Chalmers University of Technology for useful discussions and providing the data shown in Figure 1. I.E. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1745301. A.Y.C. and A.J.M. were supported by the National Science Foundation under Grant No. 1911220. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation.
Funding AgencyGrant Number
NSF Graduate Research FellowshipDGE-1745301
Record Number:CaltechAUTHORS:20210831-204003339
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:110664
Deposited By: George Porter
Deposited On:01 Sep 2021 14:33
Last Modified:01 Sep 2021 14:33

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