A Caltech Library Service

Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

Kung, K. T-Y. and Suni, I. and Nicolet, M-A. (1984) Electrical characteristics of amorphous molybdenum-nickel contacts to silicon. Journal of Applied Physics, 55 (10). pp. 3882-3885. ISSN 0021-8979.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. % Mo). The contact resistivity on both p+ and n+ Si is in the 10^−6 Ω cm^2 range. The barrier height for as-deposited samples varies between φbp=0.47–0.42 V on p-type Si and between φbn=0.63–0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum φbp+φbn always equals 1.12 V, within experimental error. After thermal treatment at 500 °C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most ~0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© 1984 American Institute of Physics. Received 15 July 1983; accepted 30 January 1984. The authors are grateful to M. Finetti for assistance in using the photolithographic facilities and for constructive criticisms on the electrical measurements, B.X. Liu and T. Banwell for assistance in operating the x-ray diffractometer and the MeV van de Graaf accelerator, and R. Gorris for technical assistance. Access to the photolithography lab and to the x-ray diffraction facility were granted by Professor D. Rutledge and Professor T. Vreeland, Jr. This work was supported in part by the U.S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D.B. Bickler and D.R. Burger).
Funding AgencyGrant Number
Department of EnergyUNSPECIFIED
Subject Keywords:barrier height, amorphous state, silicon, contact potential, metallization, diffusion barriers, schottky barrier diodes, layers, chemical composition, metal−, semiconductor contacts, nickel, molybdenum, electric conductivity
Issue or Number:10
Record Number:CaltechAUTHORS:KUNjap84
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11075
Deposited By: Tony Diaz
Deposited On:02 Jul 2008
Last Modified:12 Dec 2019 17:07

Repository Staff Only: item control page