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A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser

Katz, J. and Bar-Chaim, N. and Chen, P. C. and Margalit, S. and Ury, I. and Wilt, D. and Yust, M. and Yariv, A. (1980) A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser. Applied Physics Letters, 37 (2). pp. 211-213. ISSN 0003-6951.

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A GaAlAs double-heterostructure laser has been monolithically integrated with a heterojunction bipolar transistor on a GaAs substrate. Integration is achieved by means of a mutually compatible structure formed by Be ion implantation. Typical pulsed threshold currents for the laser are 60 mA, and the transistors have a typical common-emitter current gain of 900.

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Additional Information:© 1980 American Institute of Physics. Received 19 February 1980; accepted for publication 8 May 1980. This research was supported by the National Science Foundation and the Office of Naval Research.
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National Science FoundationUNSPECIFIED
Office of Naval ResearchUNSPECIFIED
Issue or Number:2
Record Number:CaltechAUTHORS:KATapl80a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11086
Deposited By: Tony Diaz
Deposited On:16 Jul 2008 19:52
Last Modified:03 Oct 2019 00:15

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