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Q-switched ruby laser alloying of Ohmic contacts on gallium arsenide epilayers

Margalit, Shlomo and Fekete, Dan and Pepper, David M. and Lee, Chien-Ping and Yariv, Amnon (1978) Q-switched ruby laser alloying of Ohmic contacts on gallium arsenide epilayers. Applied Physics Letters, 33 (4). pp. 346-347. ISSN 0003-6951.

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Ohmic contacts of AuGe have been produced on GaAs epilayers by laser alloying. The contacts possess morphological and electrical properties which are superior to those formed by conventional alloying.

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Additional Information:© 1978 American Institute of Physics. Received 17 March 1978; accepted for publication 5 June 1978. We wish to acknowledge fruitful discussions with Professors Pol E. Duwez and William L. Johnson. One of us (DMP) is grateful for the support granted by the Hughes Aircraft Company. Also, the support of the Weizmann Institute (for DF) is gratefully acknowledged.
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Office of Naval ResearchUNSPECIFIED
National Science FoundationUNSPECIFIED
Hughes Aircraft CompanyUNSPECIFIED
Weizmann InstituteUNSPECIFIED
Issue or Number:4
Record Number:CaltechAUTHORS:MARapl78
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11087
Deposited By: Tony Diaz
Deposited On:16 Jul 2008 19:49
Last Modified:03 Oct 2019 00:15

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