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Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects

Mazza, Michael F. and Cabán-Acevedo, Miguel and Fu, Harold J. and Meier, Madeline C. and Thompson, Annelise C. and Ifkovits, Zachary P. and Carim, Azhar I. and Lewis, Nathan S. (2022) Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects. ACS Materials Au, 2 (2). pp. 74-78. ISSN 2694-2461. doi:10.1021/acsmaterialsau.1c00049.

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Passivating defective regions on monolayer graphene with metal oxides remains an active area of research for graphene device integration. To effectively passivate these regions, a water-free atomic layer deposition (ALD) recipe was developed and yielded selective-area ALD (sa-ALD) of mixed-metal oxides onto line defects in monolayer graphene. The anisotropically deposited film targeted high-energy defect sites that were formed during synthesis or transfer of the graphene layer. The passivating layer exceeded 10 nm thickness with minimal deposition onto the basal plane of graphene. The mixed-metal oxide film was of comparable quality to films deposited using nonselective water-based ALD methods, as shown by X-ray photoelectron spectroscopy. The development of sa-ALD techniques to target defect regions on the graphene sheet, while keeping the basal plane intact, will provide a new mechanism to passivate graphene defects and modify the electronic and physical properties of graphene.

Item Type:Article
Related URLs:
URLURL TypeDescription
Mazza, Michael F.0000-0003-3995-3100
Cabán-Acevedo, Miguel0000-0003-0054-8044
Fu, Harold J.0000-0001-9738-209X
Meier, Madeline C.0000-0003-1608-0810
Thompson, Annelise C.0000-0003-2414-7050
Ifkovits, Zachary P.0000-0003-2538-0794
Carim, Azhar I.0000-0003-3630-6872
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2021 The Authors. Published by American Chemical Society. Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0). Received 20 September 2021. Accepted 11 November 2021. Revised 9 November 2021. Published online 19 November 2021. M.F.M. and N.S.L. acknowledge support from the U.S. Department of Energy under Award DE-FG02-04ER15483. M.C. acknowledges support from the Ford Foundation under the Postdoctoral Scholar Fellowship program. M.C. acknowledges support from the National Science Foundation CCI Solar Fuels Program under Grant No. CHE-1305124. A.C.T. and M.C.M. acknowledge support from National Science Foundation graduate research fellowships. M.C.M. also acknowledges the Resnick Sustainability Institute at Caltech for fellowship support. Research was in part carried out at the Molecular Materials Research Center in the Beckman Institute at the California Institute of Technology. The authors declare no competing financial interest.
Group:Resnick Sustainability Institute, CCI Solar Fuels
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG02-04ER15483
Ford FoundationUNSPECIFIED
NSF Graduate Research FellowshipUNSPECIFIED
Resnick Sustainability InstituteUNSPECIFIED
Subject Keywords:atomic layer deposition, graphene, defect driven reactivity, defect passivation, device integration
Issue or Number:2
Record Number:CaltechAUTHORS:20211201-231211106
Persistent URL:
Official Citation:Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects. Michael F. Mazza, Miguel Cabán-Acevedo, Harold J. Fu, Madeline C. Meier, Annelise C. Thompson, Zachary P. Ifkovits, Azhar I. Carim, and Nathan S. Lewis. ACS Materials Au 2022 2 (2), 74-78; DOI: 10.1021/acsmaterialsau.1c00049
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:112157
Deposited By: George Porter
Deposited On:02 Dec 2021 17:37
Last Modified:24 Mar 2022 22:44

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