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Using silicon disk resonators to measure mechanical losses caused by an electric field

Klochkov, Y. Yu. and Prokhorov, L. G. and Matiushechkina, M. S. and Adhikari, R. X. and Mitrofanov, V. P. (2022) Using silicon disk resonators to measure mechanical losses caused by an electric field. Review of Scientific Instruments, 93 (1). Art. No. 014501. ISSN 0034-6748. doi:10.1063/5.0076311. https://resolver.caltech.edu/CaltechAUTHORS:20220104-157933000

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Abstract

Several projects of the next generation gravitational-wave detectors use the high purity monocrystalline silicon test masses. The electric field of the actuator that is applied to correct the position of the silicon test mass causes additional mechanical losses and associated noise. Disk mechanical resonators are widely used to study mechanical losses in multilayer optical coatings that are deposited on the test masses of gravitational-wave detectors. We use silicon disk resonators to study losses caused by an electric field. In particular, the dependence of mechanical losses on the resistivity of silicon is investigated. The resonator is a thin commercial silicon wafer in which a low frequency nodal diameter mode is excited. A DC voltage is applied between the wafer and a nearby electrode. We use two measurement configurations. In the first configuration, the dependence of losses on the resistance in the voltage supply circuit is investigated. The dependence of losses on the resistivity of silicon is investigated in the second configuration. We propose a model that relates the electric field induced mechanical loss in disk resonators to the resistivity of the material. Measurements are carried out for low and high resistivity silicon wafers. The measurement results are compared with calculations. Based on these studies, it is possible to estimate the loss and noise of the test masses of gravitational-wave detectors associated with electrostatic actuators.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/5.0076311DOIArticle
ORCID:
AuthorORCID
Prokhorov, L. G.0000-0002-0869-185X
Adhikari, R. X.0000-0002-5731-5076
Mitrofanov, V. P.0000-0002-6983-4981
Additional Information:© 2022 Author(s). Published under an exclusive license by AIP Publishing. Submitted: 23 October 2021; Accepted: 13 December 2021; Published Online: 04 January 2022. The authors are grateful to Ashot Markosyan for help with the measurement of the resistivity of silicon wafers and Edgard Bonilla for the valuable comments. This research was supported by the Interdisciplinary Scientific and Educational School of Moscow University “Fundamental and Applied Space Research” and funded by Russian Foundation for Basic Research under Project No. 19-29-11003. This paper was assigned LIGO Document No. LIGO-P2100057. The authors declare that they have no conflicts of interest. DATA AVAILABILITY. The data that support the findings of this study are available from the corresponding author upon reasonable request.
Group:LIGO, Astronomy Department
Funders:
Funding AgencyGrant Number
Moscow UniversityUNSPECIFIED
Russian Foundation for Basic Research19-29-11003
Other Numbering System:
Other Numbering System NameOther Numbering System ID
LIGO DocumentP2100057
Issue or Number:1
DOI:10.1063/5.0076311
Record Number:CaltechAUTHORS:20220104-157939000
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20220104-157933000
Official Citation:Y. Yu. Klochkov, L. G. Prokhorov, M. S. Matiushechkina, R. X. Adhikari, and V. P. Mitrofanov , "Using silicon disk resonators to measure mechanical losses caused by an electric field", Review of Scientific Instruments 93, 014501 (2022) https://doi.org/10.1063/5.0076311
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:112685
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:04 Jan 2022 22:20
Last Modified:04 Jan 2022 22:20

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