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InGaAsP/InP Membrane Gain Sections for III-V/SiN_x Heterogeneous Photonic Integration

Heidelberger, Christopher and Santis, Christos T. and Plant, Jason J. and Morissette, Erin M. and Kharas, Dave and Swint, Reuel B. and Yariv, Amnon and Juodawlkis, Paul W. (2021) InGaAsP/InP Membrane Gain Sections for III-V/SiN_x Heterogeneous Photonic Integration. In: 2021 Conference on Lasers and Electro-Optics (CLEO). Optical Society of America , Washington, DC, Art. No. STh2H.1. ISBN 978-1-943580-91-0. https://resolver.caltech.edu/CaltechAUTHORS:20220106-508565300

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Abstract

We present a fabrication process for 200 nm thick InGaAsP/InP membrane gain sections (λ = 1550 nm) suitable for heterogeneous integration with SiN_x PICs. The structures exhibit desired electrical performance and support lasing.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1364/cleo_si.2021.sth2h.1DOIArticle
https://ieeexplore.ieee.org/document/9571294PublisherArticle
ORCID:
AuthorORCID
Santis, Christos T.0000-0001-8636-1613
Alternate Title:InGaAsP/InP Membrane Gain Sections for III-V/SiNx Heterogeneous Photonic Integration
Additional Information:© 2021 The Author(s). DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited. This material is based upon work supported by the Defense Advanced Research Projects Agency (DARPA) under Air Force Contract No. FA8702-15-D-0001. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of DARPA. Delivered to the U.S. Government with Unlimited Rights, as defined in DFARS Part 252.227-7013 or 7014 (Feb 2014). Notwithstanding any copyright notice, U.S. Government rights in this work are defined by DFARS 252.227-7013 or DFARS 252.227-7014 as detailed above. Use of this work other than as specifically authorized by the U.S. Government may violate any copyrights that exist in this work.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Air Force Office of Scientific Research (AFOSR)FA8702-15-D-0001
DOI:10.1364/cleo_si.2021.sth2h.1
Record Number:CaltechAUTHORS:20220106-508565300
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20220106-508565300
Official Citation:C. Heidelberger, C. T. Santis, J. J. Plant, E. M. Morissette, D. Kharas, R. B. Swint, A. Yariv, and P. W. Juodawlkis, "InGaAsP/InP Membrane Gain Sections for III-V/SiNx Heterogeneous Photonic Integration," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optical Society of America, 2021), paper STh2H.1.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:112759
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:09 Jan 2022 21:19
Last Modified:09 Jan 2022 21:19

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