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Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

Jin, Warren and Yang, Qi-Fan and Chang, Lin and Shen, Boqiang and Wang, Heming and Leal, Mark A. and Wu, Lue and Gao, Maodong and Feshali, Avi and Paniccia, Mario and Vahala, Kerry J. and Bowers, John E. (2021) Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator. In: 2021 Conference on Lasers and Electro-Optics (CLEO). Optical Society of America , Washington, DC, Art. No. SM1A.2. ISBN 978-1-943580-91-0. https://resolver.caltech.edu/CaltechAUTHORS:20220106-104652400

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Abstract

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundry- fabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz² Hz⁻¹ and yielding instantaneous linewidth of 1.2 Hz.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1364/cleo_si.2021.sm1a.2DOIArticle
https://ieeexplore.ieee.org/document/9572355PublisherArticle
ORCID:
AuthorORCID
Jin, Warren0000-0002-4297-7982
Yang, Qi-Fan0000-0002-7036-1712
Shen, Boqiang0000-0003-0697-508X
Wang, Heming0000-0003-3861-0624
Leal, Mark A.0000-0002-6779-3741
Wu, Lue0000-0002-7503-7057
Vahala, Kerry J.0000-0003-1783-1380
Bowers, John E.0000-0003-4270-8296
Additional Information:© 2021 The Author(s). This work is supported by the Defense Advanced Research Projects Agency, DARPA (HR0011-15-C-055, FA9453-19-C-0029) and Anello Photonics.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)HR0011-15-C-055
Defense Advanced Research Projects Agency (DARPA)FA9453-19-C-0029
Anello PhotonicsUNSPECIFIED
Classification Code:OCIS codes: (130.3120) Integrated optics devices; (140.3945) Microcavities
DOI:10.1364/cleo_si.2021.sm1a.2
Record Number:CaltechAUTHORS:20220106-104652400
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20220106-104652400
Official Citation:W. Jin, Q. Yang, L. Chang, B. Shen, H. Wang, M. A. Leal, L. Wu, M. Gao, A. Feshali, M. Paniccia, K. J. Vahala, and J. E. Bowers, "Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator," in Conference on Lasers and Electro-Optics, J. Kang, S. Tomasulo, I. Ilev, D. Müller, N. Litchinitser, S. Polyakov, V. Podolskiy, J. Nunn, C. Dorrer, T. Fortier, Q. Gan, and C. Saraceno, eds., OSA Technical Digest (Optical Society of America, 2021), paper SM1A.2.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:112764
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:09 Jan 2022 21:15
Last Modified:09 Jan 2022 21:15

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