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Interfacial impurities and the reaction between Si and evaporated Al

Best, John S. and McCaldin, J. O. (1975) Interfacial impurities and the reaction between Si and evaporated Al. Journal of Applied Physics, 46 (9). pp. 4071-4072. ISSN 0021-8979.

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Additional Information:Copyright © 1975 American Institute of Physics. Received 3 March 1975; in final form 19 May 1975. The authors wish to thank K. Evans for SEM photographs and C.A. Mead for use of a Reichert microscope. Work supported in part by the Office of Naval Research and NASA through the Jet Propulsion Laboratory of the California Institute of Technology.
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Office of Naval ResearchUNSPECIFIED
Issue or Number:9
Record Number:CaltechAUTHORS:BESjap75
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11277
Deposited By: Archive Administrator
Deposited On:29 Jul 2008 06:04
Last Modified:03 Oct 2019 00:17

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