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Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface

Redondo, Antonio and Goddard, William A., III and McGill, T. C. (1982) Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface. Journal of Vacuum Science and Technology, 21 (2). pp. 328-329. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:REDjvst82c

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Abstract

Results of fully correlated theoretical ab initio calculations are reported [1] and compared with the following experiments: (i) Si(2p) core level shifts [2,3], (ii) the dispersion of dangling bond surfaces states [4], and (iii) angle-integrated ionization potentials (I.P.) from dangling bond orbials [5].


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.571772DOIArticle
https://avs.scitation.org/doi/10.1116/1.571772PublisherArticle
ORCID:
AuthorORCID
Goddard, William A., III0000-0003-0097-5716
Additional Information:© 1982 American Vacuum Society. Received 1 February 1982; accepted 22 April 1982. This work was supported by a contract (No. N00014-79-C-0797) from the Office of Naval Research. Arthur Amos Noyes Laboratory of Chemical Physics, Contribution No. 6621.
Funders:
Funding AgencyGrant Number
Office of Naval ResearchN00014-79-C-0797
Other Numbering System:
Other Numbering System NameOther Numbering System ID
Arthur Amos Noyes Laboratory of Chemical Physics6621
WAG0170
Record Number:CaltechAUTHORS:REDjvst82c
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:REDjvst82c
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11315
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:30 Jul 2008 21:38
Last Modified:26 Apr 2019 22:28

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