Redondo, Antonio and Goddard, William A., III and McGill, T. C.
(1982)
Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface.
Journal of Vacuum Science and Technology, 21
(2).
pp. 328-329.
ISSN 0022-5355.
doi:10.1116/1.571772.
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Abstract
Results of fully correlated theoretical ab initio calculations are reported [1] and compared with the following experiments: (i) Si(2p) core level shifts [2,3], (ii) the dispersion of dangling bond surfaces states [4], and (iii) angle-integrated ionization potentials (I.P.) from dangling bond orbials [5].
| Item Type: | Article |
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| Additional Information: | © 1982 American Vacuum Society.
Received 1 February 1982; accepted 22 April 1982.
This work was supported by a contract (No. N00014-79-C-0797) from the Office of Naval Research.
Arthur Amos Noyes Laboratory of Chemical Physics, Contribution No. 6621. |
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| Funders: | | Funding Agency | Grant Number |
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| Office of Naval Research | N00014-79-C-0797 |
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| Other Numbering System: | | Other Numbering System Name | Other Numbering System ID |
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| Arthur Amos Noyes Laboratory of Chemical Physics | 6621 | | WAG | 0170 |
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| Issue or Number: | 2 |
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| DOI: | 10.1116/1.571772 |
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| Record Number: | CaltechAUTHORS:REDjvst82c |
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| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:REDjvst82c |
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| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
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| ID Code: | 11315 |
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| Collection: | CaltechAUTHORS |
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| Deposited By: |
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| Deposited On: | 30 Jul 2008 21:38 |
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| Last Modified: | 08 Nov 2021 21:57 |
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