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Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface

Redondo, Antonio and Goddard, William A., III and McGill, T. C. (1982) Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface. Journal of Vacuum Science and Technology, 21 (2). pp. 328-329. ISSN 0022-5355. doi:10.1116/1.571772.

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Results of fully correlated theoretical ab initio calculations are reported [1] and compared with the following experiments: (i) Si(2p) core level shifts [2,3], (ii) the dispersion of dangling bond surfaces states [4], and (iii) angle-integrated ionization potentials (I.P.) from dangling bond orbials [5].

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Goddard, William A., III0000-0003-0097-5716
Additional Information:© 1982 American Vacuum Society. Received 1 February 1982; accepted 22 April 1982. This work was supported by a contract (No. N00014-79-C-0797) from the Office of Naval Research. Arthur Amos Noyes Laboratory of Chemical Physics, Contribution No. 6621.
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Office of Naval ResearchN00014-79-C-0797
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Arthur Amos Noyes Laboratory of Chemical Physics6621
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ID Code:11315
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Deposited On:30 Jul 2008 21:38
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