Finck, A. D. K. and Champagne, A. R. and Eisenstein, J. P. and Pfeiffer, L. N. and West, K. W. (2008) Area dependence of interlayer tunneling in strongly correlated bilayer two-dimensional electron systems at ν_T = 1. Physical Review B, 78 (7). Art. No. 075302. ISSN 1098-0121. doi:10.1103/PhysRevB.78.075302. https://resolver.caltech.edu/CaltechAUTHORS:FINprb08
![[img]](https://authors.library.caltech.edu/style/images/fileicons/application_pdf.png)
|
PDF
- Published Version
See Usage Policy. 238kB | |
|
PDF
- Submitted Version
See Usage Policy. 171kB | |
![[img]](https://authors.library.caltech.edu/11332/2/eds_suggest-prb.gif) |
Image (GIF) (Editors' Suggestion)
- Cover Image
See Usage Policy. 23kB |
Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:FINprb08
Abstract
The area and perimeter dependence of the Josephson-like interlayer tunneling signature of the coherent ν_T = 1 quantum Hall phase in bilayer two-dimensional electron systems is examined. Electrostatic top gates of various sizes and shapes are used to locally define distinct ν_T = 1 regions in the same sample. Near the phase boundary with the incoherent ν_T = 1 state at large layer separation, our results demonstrate that the tunneling conductance in the coherent phase is closely proportional to the total area of the tunneling region. This implies that tunneling at ν_T = 1 is a bulk phenomenon in this regime.
| Item Type: | Article | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Related URLs: |
| |||||||||
| Alternate Title: | Area dependence of interlayer tunneling in strongly correlated bilayer 2D electron systems at ν_T = 1 | |||||||||
| Additional Information: | © 2008 The American Physical Society. (Received 16 May 2008; revised 15 July 2008; published 1 August 2008) We are pleased to thank Herb Fertig and Allan MacDonald for the enlightening discussions. This work was supported via NSF Grant No. DMR-0552270 and DOE Grant No. DE-FG03–99ER45766. | |||||||||
| Funders: |
| |||||||||
| Subject Keywords: | aluminum compounds; gallium arsenide; III-V semiconductors; Josephson effect; quantum Hall effect; semiconductor quantum wells; strongly correlated electron systems; tunnelling; two-dimensional electron gas | |||||||||
| Issue or Number: | 7 | |||||||||
| Classification Code: | PACS numbers: 73.43.Jn, 71.10.Pm, 71.35.Lk | |||||||||
| DOI: | 10.1103/PhysRevB.78.075302 | |||||||||
| Record Number: | CaltechAUTHORS:FINprb08 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:FINprb08 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 11332 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Archive Administrator | |||||||||
| Deposited On: | 02 Aug 2008 04:18 | |||||||||
| Last Modified: | 08 Nov 2021 21:57 |
Repository Staff Only: item control page
