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High-field transport and hot electron noise in GaAs from first principles: role of two-phonon scattering

Cheng, Peishi S. and Sun, Shi-Ning and Choi, Alexander Y. and Minnich, Austin J. (2022) High-field transport and hot electron noise in GaAs from first principles: role of two-phonon scattering. . (Unpublished)

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High-field charge transport in semiconductors is of fundamental interest and practical importance. While the ab initio treatment of low-field transport is well-developed, the treatment of high-field transport is much less so, particularly for multi-phonon processes that are reported to be relevant in GaAs. Here, we report a calculation of the high-field transport properties and power spectral density (PSD) of hot electrons in GaAs from first principles including on-shell two-phonon (2ph) scattering. The on-shell 2ph scattering rates are found to qualitatively alter the high-field distribution function by increasing both the momentum and energy relaxation rates as well as contributing markedly to intervalley scattering. This finding reconciles a long-standing discrepancy regarding the strength of intervalley scattering in GaAs as inferred from transport and optical studies. The characteristic non-monotonic trend of PSD with electric field is not predicted at this level of theory, indicating that off-shell 2ph or other processes play a fundamental role in high-field transport. This observation highlights how ab initio calculations of PSD may be used as a stringent test of the electron-phonon interaction in semiconductors.

Item Type:Report or Paper (Discussion Paper)
Related URLs:
URLURL TypeDescription Paper
Cheng, Peishi S.0000-0002-3513-9972
Sun, Shi-Ning0000-0002-5984-780X
Choi, Alexander Y.0000-0003-2006-168X
Minnich, Austin J.0000-0002-9671-9540
Additional Information:This work was supported by AFOSR under Grant Number FA9550-19-1-0321. The authors thank B. Hatanpäaä, D. Catherall and T. Esho for helpful discussions.
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)FA9550-19-1-0321
Record Number:CaltechAUTHORS:20220223-214559020
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:113562
Deposited By: George Porter
Deposited On:25 Feb 2022 00:15
Last Modified:25 Feb 2022 00:15

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