So, F. C. T. and Kolawa, E. and Zhao, X.-A. and Pan, E. T.-S. and Nicolet, M.-A. (1988) WxN1–x alloys as diffusion barriers between Al and Si. Journal of Applied Physics, 64 (5). pp. 2787-2789. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:SOFjap88
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Abstract
Reactively sputtered tungsten nitride (WxN1–x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n + -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n + -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into <Si> through the WxN1–x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W.
| Item Type: | Article |
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| Additional Information: | © 1988 American Institute of Physics. We thank R. Pieters-Emerick for help in manuscript preparation. This work is supported by the Army Research Office under Contract No. DAAG29-85-K-0192. Dr. D. B. Rutledge is gratefully acknowledged for granting us access to his HP Semiconductor Parameter Analyzer and photolithographic facilities. |
| Record Number: | CaltechAUTHORS:SOFjap88 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:SOFjap88 |
| Alternative URL: | http://dx.doi.org/10.1063/1.341579 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 1138 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 22 Dec 2005 |
| Last Modified: | 26 Dec 2012 08:42 |
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