Vasquez, Richard P. and Brain, Ruth A. and Ross, David and Yeh, Nai-Chang (1992) Epitaxial C₆₀ Film on Si(111) by XPS. Surface Science Spectra, 1 (2). pp. 242-245. ISSN 1055-5269. doi:10.1116/1.1247645. https://resolver.caltech.edu/CaltechAUTHORS:20220308-454058000
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Abstract
High resolution XPS measurements of the C 1s, including energy losses, and the valence band regions are presented for a high quality epitaxial film (average grain size ~70 nm) of C₆₀ on a Si (111) substrate. Similar films have also been characterized with x-ray diffraction and transmission electron microscopy.
Item Type: | Article | ||||||
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Alternate Title: | Epitaxial C60 Film on Si(111) by XPS | ||||||
Additional Information: | © 1992 American Vacuum Society. This work was supported by a grant from the Caltech President's Fund. | ||||||
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Subject Keywords: | photoemission; fullerene | ||||||
Issue or Number: | 2 | ||||||
Classification Code: | PACS: 79.60.Eq, 68.55.Jk | ||||||
DOI: | 10.1116/1.1247645 | ||||||
Record Number: | CaltechAUTHORS:20220308-454058000 | ||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20220308-454058000 | ||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
ID Code: | 113801 | ||||||
Collection: | CaltechAUTHORS | ||||||
Deposited By: | George Porter | ||||||
Deposited On: | 09 Mar 2022 20:28 | ||||||
Last Modified: | 09 Mar 2022 20:28 |
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