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Epitaxial C₆₀ Film on Si(111) by XPS

Vasquez, Richard P. and Brain, Ruth A. and Ross, David and Yeh, Nai-Chang (1992) Epitaxial C₆₀ Film on Si(111) by XPS. Surface Science Spectra, 1 (2). pp. 242-245. ISSN 1055-5269. doi:10.1116/1.1247645.

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High resolution XPS measurements of the C 1s, including energy losses, and the valence band regions are presented for a high quality epitaxial film (average grain size ~70 nm) of C₆₀ on a Si (111) substrate. Similar films have also been characterized with x-ray diffraction and transmission electron microscopy.

Item Type:Article
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URLURL TypeDescription
Yeh, Nai-Chang0000-0002-1826-419X
Alternate Title:Epitaxial C60 Film on Si(111) by XPS
Additional Information:© 1992 American Vacuum Society. This work was supported by a grant from the Caltech President's Fund.
Funding AgencyGrant Number
Caltech President’s FundUNSPECIFIED
Subject Keywords:photoemission; fullerene
Issue or Number:2
Classification Code:PACS: 79.60.Eq, 68.55.Jk
Record Number:CaltechAUTHORS:20220308-454058000
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:113801
Deposited By: George Porter
Deposited On:09 Mar 2022 20:28
Last Modified:09 Mar 2022 20:28

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