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A 2.4pJ/b 100Gb/s 3D-integrated PAM-4 Optical Transmitter with Segmented SiP MOSCAP Modulators and a 2-Channel 28nm CMOS Driver

Hashemi Talkhooncheh, Arian and Zhang, Weiwei and Wang, Minwo and Thomson, David J. and Ebert, Martin and Ke, Li and Reed, Graham T. and Emami, Azita (2022) A 2.4pJ/b 100Gb/s 3D-integrated PAM-4 Optical Transmitter with Segmented SiP MOSCAP Modulators and a 2-Channel 28nm CMOS Driver. In: 2022 IEEE International Solid- State Circuits Conference (ISSCC). IEEE , Piscataway, NJ, pp. 284-286. ISBN 9781665428002. https://resolver.caltech.edu/CaltechAUTHORS:20220407-503740421

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Abstract

Data centers continue to require interconnects with higher bandwidth densities and energy efficiencies. Silicon photonics (SiP)-based solutions have gained interest for implementing low-cost and power efficient 100+Gb/s/A optical transceivers. While microring modulators (MRMs) have small footprints and high electro-optical bandwidth (EOBW), they suffer from an inherent tradeoff between bandwidth and optical phase efficiency, high sensitivity to process and temperature variations, and non-linear electro-optic characteristics [1 – 2]. Travelling-wave Mach-Zehnder Modulators (TW-MZMs) require power-hungry drivers to compensate microwave losses and occupy large areas on chip [3 – 4]. Metal-oxide-silicon-capacitor (MOSCAP)-based phase modulators can significantly scale the area and power of the optical transmitter (OTX) owing to their superior optical efficiency (voltage-length product at n phase shift of V π L < 1Vmm) and compact footprint (< 1mm) [5]. MOSCAP modulators, however, impose large capacitive parasitics (~3fF/μm), which could limit the electro-optical bandwidth (EOBW) significantly. State-of-the-art wireline transmitters cannot meet the requirements of MOSCAP modulators due to their 50Ω-terminated design and limited output voltage swing [6]. This paper presents a 3D-integrated 100Gb/s PAM-4 OTX with electronic pre-distortion (PD) and BW extension techniques to compensate for MOSCAP modulator BW limitations.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/ISSCC42614.2022.9731563DOIArticle
ORCID:
AuthorORCID
Hashemi Talkhooncheh, Arian0000-0001-8946-5047
Zhang, Weiwei0000-0002-1086-5775
Thomson, David J.0000-0002-1838-2663
Emami, Azita0000-0003-2608-9691
Additional Information:© 2022 IEEE. The authors would like to thank Aaron Zilkie, Roshanak Shafiha, David Nelson and other team members at Rockley Photonics for their continuous technical support and funding.
Funders:
Funding AgencyGrant Number
Rockley PhotonicsUNSPECIFIED
DOI:10.1109/isscc42614.2022.9731563
Record Number:CaltechAUTHORS:20220407-503740421
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20220407-503740421
Official Citation:A. H. Talkhooncheh et al., "A 2.4pJ/b 100Gb/s 3D-integrated PAM-4 Optical Transmitter with Segmented SiP MOSCAP Modulators and a 2-Channel 28nm CMOS Driver," 2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, pp. 284-286, doi: 10.1109/ISSCC42614.2022.9731563.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:114186
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:07 Apr 2022 09:58
Last Modified:24 Oct 2022 23:21

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  • Hashemi Talkhooncheh, Arian and Zhang, Weiwei and Wang, Minwo and Thomson, David J. and Ebert, Martin and Ke, Li and Reed, Graham T. and Emami, Azita A 2.4pJ/b 100Gb/s 3D-integrated PAM-4 Optical Transmitter with Segmented SiP MOSCAP Modulators and a 2-Channel 28nm CMOS Driver. (deposited 07 Apr 2022 09:58) [Currently Displayed]

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