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Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene

Arca, F. and Mendez, J. P. and Ortiz, M. and Ariza, M. P. (2022) Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene. Acta Materialia, 234 . Art. No. 117987. ISSN 1359-6454. doi:10.1016/j.actamat.2022.117987.

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We show, through the use of the Landauer-Büttiker (LB) formalism and a tight-binding (TB) model, that the transport gap of twinned graphene can be tuned through the application of a uniaxial strain in the direction normal to the twin band. Remarkably, we find that the transport gap E_(gap) bears a square-root dependence on the control parameter ϵₓ − ϵ꜀,, where ϵₓ is the applied uniaxial strain and ϵ꜀ ~ 19% is a critical strain. We interpret this dependence as evidence of criticality underlying a continuous phase transition, with ϵₓ − ϵ꜀ playing the role of control parameter and the transport gap E_(gap) playing the role of order parameter. For ϵₓ < ϵ꜀, the transport gap is non-zero and the material is semiconductor, whereas for ϵₓ > ϵ꜀ the transport gap closes to zero and the material becomes conductor, which evinces a semiconductor-to-conductor phase transition. The computed critical exponent of 1/2 places the transition in the meanfield universality class, which enables far-reaching analogies with other systems in the same class.

Item Type:Article
Related URLs:
URLURL TypeDescription Data S1. Supplementary Raw Research Data
Arca, F.0000-0003-2473-4589
Mendez, J. P.0000-0002-9493-0879
Ortiz, M.0000-0001-5877-4824
Ariza, M. P.0000-0003-0266-0216
Additional Information:© 2022 The Author(s). Published by Elsevier Ltd on behalf of Acta Materialia Inc. Under a Creative Commons license. Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0). Received 24 February 2022, Revised 20 April 2022, Accepted 28 April 2022, Available online 7 May 2022, Version of Record 11 May 2022. The authors acknowledge financial support by the Consejería de Transformación Económica, Industria, Conocimiento y Universidades of Junta de Andalucía, Spain under grant number P18-RT-1485 and the Ministerio de Ciencia, Innovación y Universidades of Spain under grant number RTI2018-094325-B-I00. The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Funding AgencyGrant Number
Junta de Andalucía Consejería de Economía, Innovación, Ciencia y EmpleoP18-RT-1485
Ministerio de Ciencia, Innovación y Universidades (MCIU)RTI2018-094325-B-I00
Subject Keywords:Graphene; Geometrical twinning; Phase transformation; Critical phenomena
Record Number:CaltechAUTHORS:20220513-557834000
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Official Citation:F. Arca, J.P. Mendez, M. Ortiz, M.P. Ariza, Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene, Acta Materialia, Volume 234, 2022, 117987, ISSN 1359-6454,
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:114729
Deposited By: George Porter
Deposited On:18 May 2022 15:18
Last Modified:18 May 2022 15:18

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