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Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity

McCaldin, J. O. and McGill, T. C. and Mead, C. A. (1976) Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity. Physical Review Letters, 36 (1). pp. 56-58. ISSN 0031-9007. https://resolver.caltech.edu/CaltechAUTHORS:MCCprl76

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Abstract

The Schottky barrier for holes on common III-V and II-VI semiconductors contacted by Au is shown to depend only on the anion electronegativity.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1103/PhysRevLett.36.56DOIUNSPECIFIED
Additional Information:©1976 The American Physical Society Received 16 September 1975 Work supported in part by U. S. Office of Naval Research Grant No. N00014-75-C-0423. TCM was an Alfred P. Sloan Foundation Fellow.
Issue or Number:1
Record Number:CaltechAUTHORS:MCCprl76
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:MCCprl76
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1151
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:24 Dec 2005
Last Modified:02 Oct 2019 22:40

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