Lewis, Scott M. and DeRose, Guy A. and Alty, Hayden R. and Hunt, Matthew S. and Lee, Nathan and Mann, James A. and Grindell, Richard and Wertheim, Alex and De Rose, Lucia and Fernandez, Antonio and Muryn, Christopher A. and Whitehead, George F. S. and Timco, Grigore A. and Scherer, Axel and Winpenny, Richard E. P. (2022) Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography. Advanced Functional Materials, 32 (32). Art. No. 2202710. ISSN 1616-301X. doi:10.1002/adfm.202202710. https://resolver.caltech.edu/CaltechAUTHORS:20220718-951245300
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Abstract
A new class of electron bean negative tone resist materials has been developed based on heterometallic rings. The initial resist performance demonstrates a resolution of 15 nm half-pitch but at the expense of a low sensitivity. To improve sensitivity a 3D Monte Carlo simulation is used that utilizes a secondary and Auger electron generation model. The simulation suggests that the sensitivity can be dramatically improved while maintaining high resolution by incorporating appropriate chemical functionality around the metal–organic core. The new resists designs based on the simulation have the increased sensitivity expected and illustrate the value of the simulation approach.
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Additional Information: | © 2022 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. Version of Record online: 27 May 2022; Manuscript revised: 22 April 2022; Manuscript received: 08 March 2022. This work was supported by the EPSRC (UK) (EP/P000444/1 and EP/R023158/1) including an Established Career Fellowship to R.E.P.W. (EP/R011079/1) and by an Innovate UK award (Project Number 18238). The authors gratefully acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech. The authors declare no conflict of interest. Data Availability Statement: The data that support the findings of this study are available from the corresponding author upon reasonable request. | ||||||||||
Group: | Kavli Nanoscience Institute | ||||||||||
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Subject Keywords: | 3D Monte Carlo Simulation; electron beam lithography; metal–organic electron beam resists | ||||||||||
Issue or Number: | 32 | ||||||||||
DOI: | 10.1002/adfm.202202710 | ||||||||||
Record Number: | CaltechAUTHORS:20220718-951245300 | ||||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20220718-951245300 | ||||||||||
Official Citation: | Lewis, S. M., DeRose, G. A., Alty, H. R., Hunt, M. S., Lee, N., Mann, J. A., Grindell, R., Wertheim, A., De, L., Fernandez, A., Muryn, C. A., Whitehead, G. F. S., Timco, G. A., Scherer, A., Winpenny, R. E. P., Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography. Adv. Funct. Mater. 2022, 32, 2202710. https://doi.org/10.1002/adfm.202202710 | ||||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||||||
ID Code: | 115673 | ||||||||||
Collection: | CaltechAUTHORS | ||||||||||
Deposited By: | Tony Diaz | ||||||||||
Deposited On: | 20 Jul 2022 17:31 | ||||||||||
Last Modified: | 17 Oct 2022 18:25 |
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