A Caltech Library Service

Donor behavior in indium-alloyed silicon

McCaldin, J. O. and Mayer, J. W. (1970) Donor behavior in indium-alloyed silicon. Applied Physics Letters, 17 (9). pp. 365-366. ISSN 0003-6951.

See Usage Policy.


Use this Persistent URL to link to this item:


The anomalous doping behavior of Si regrown from In solution was studied by (1) Schottky barrier evaluation of conductivity type, (2) electron microprobe analysis for phosphorus, and (3) channeling effect measurements for interstitial In. The latter showed In present at ~ 10^19 cm^–3, but not occupying a regular substitutional or interstitial position. A correlation was found in the first two measurements between phosphorus contamination and n-type conductivity. When the In was contacted only by quartz freshly etched in HF, the n-type behavior and phosphorus contamination disappeared. The anomalous doping behavior is most likely due to phosphorus inpurity picked up by the In.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:©1970 The American Institute of Physics (Received 17 August 1970) The authors wish to thank A. Chodos, who performed the electron microprobe measurements.
Issue or Number:9
Record Number:CaltechAUTHORS:MCCapl70
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1158
Deposited By: Archive Administrator
Deposited On:24 Dec 2005
Last Modified:02 Oct 2019 22:40

Repository Staff Only: item control page