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Silver diffusion bonding and layer transfer of lithium niobate to silicon

Diest, Kenneth and Archer, Melissa J. and Dionne, Jennifer A. and Park, Young-Bae and Czubakowski, Matthew J. and Atwater, Harry A. (2008) Silver diffusion bonding and layer transfer of lithium niobate to silicon. Applied Physics Letters, 93 (9). Art. No. 092906. ISSN 0003-6951. doi:10.1063/1.2976560.

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A diffusion bonding method has been developed that enables layer transfer of single crystal lithium niobate thin films to silicon substrates. A silver film was deposited onto both the silicon and lithium niobate surfaces prior to bonding, and upon heating, a diffusion bond was formed. Transmission electron microscopy confirms the interface evolution via diffusion bonding which combines interfacial diffusion, power law creep, and growth of (111) silver grains to replace the as-bonded interface by a single polycrystalline silver film. The transferred film composition was the same as bulk lithium niobate.

Item Type:Article
Related URLs:
URLURL TypeDescription
Dionne, Jennifer A.0000-0001-5287-4357
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2008 American Institute of Physics. Received 7 July 2008; accepted 8 August 2008; published 5 September 2008. This work was supported by the Army Research Office (ARO-MURI) under Grant No. DAAD 19-01-1-0517 and the Caltech KNI and Materials Science TEM facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR-0520565.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Army Research Office (ARO)DAAD 19-01-1-0517
Subject Keywords:diffusion bonding, grain growth, insulating thin films, lithium compounds, metallic thin films, silicon, silver, transmission electron microscopy
Issue or Number:9
Record Number:CaltechAUTHORS:DIEapl08
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11585
Deposited By: Archive Administrator
Deposited On:08 Sep 2008 21:52
Last Modified:08 Nov 2021 22:00

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