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Direct measurement of desorption kinetics of ^4He at low temperatures

Sinvani, M. and Taborek, P. and Goodstein, D. (1982) Direct measurement of desorption kinetics of ^4He at low temperatures. Physical Review Letters, 48 (18). pp. 1259-1263. ISSN 0031-9007. doi:10.1103/PhysRevLett.48.1259.

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A direct method for measuring the desorption time constant of flash-desorbed 4He films (≲ 1 monolayer), adsorbed on Nichrome or Constantan heaters, is described. A time constant τ is found which behaves as τ=τ0exp[E/Ts], where Ts is the heater temperature. The value for the characteristic lifetime τ0 is 10^-9 -10^-10 sec, orders of magnitude shorter than that previously reported. The measured energy parameter E was found to be ~ 2/3 of the chemical potential.

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Alternate Title:Direct measurement of desorption kinetics of 4He at low temperatures
Additional Information:© 1982 by The American Physical Society. Received 27 January 1982. We wish to thank Professor Milton W. Cole and Michael Weimer for substantial contributions, and Roman Movshovich for technical help. This work was supported by U.S. Office of Naval Research Contract No. N0014-80-C-0447. One of us (M.S.) wishes to acknowledge the support of a Bantrell Fellowship.
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Office of Naval Research (ONR)N0014-80-C-0447
Bantrell FoundationUNSPECIFIED
Issue or Number:18
Record Number:CaltechAUTHORS:SINprl82
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11645
Deposited By: Tony Diaz
Deposited On:17 Sep 2008 01:06
Last Modified:08 Nov 2021 22:01

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