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High-efficiency and broadband on-chip electro-optic frequency comb generators

Hu, Yaowen and Yu, Mengjie and Buscaino, Brandon and Sinclair, Neil and Zhu, Di and Cheng, Rebecca and Shams-Ansari, Amirhassan and Shao, Linbo and Zhang, Mian and Kahn, Joseph M. and Lončar, Marko (2022) High-efficiency and broadband on-chip electro-optic frequency comb generators. Nature Photonics, 16 (10). pp. 679-685. ISSN 1749-4885. doi:10.1038/s41566-022-01059-y.

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Developments in integrated photonics have led to stable, compact and broadband comb generators that support a wide range of applications including communications, ranging, spectroscopy, frequency metrology, optical computing, and quantum information. Broadband optical frequency combs can be generated in electro-optical cavities, where light passes through a phase modulator multiple times while circulating in an optical resonator. However, broadband electro-optic frequency combs are currently limited by low conversion efficiencies. Here we demonstrate an integrated electro-optic frequency comb with a conversion efficiency of 30% and an optical span of 132 nm, based on a coupled-resonator platform on thin-film lithium niobate. We further show that, enabled by the high efficiency, the device acts as an on-chip femtosecond pulse source (336 fs pulse duration), which is important for applications in nonlinear optics, sensing and computing. As an example, in the ultrafast and high-power regime, we demonstrate a frequency comb with simultaneous electro-optic and third-order nonlinearity effects. Our device paves the way for practical optical frequency comb generators and provides a platform to investigate new regimes of optical physics that simultaneously involve multiple nonlinearities

Item Type:Article
Related URLs:
URLURL TypeDescription ReadCube access
Hu, Yaowen0000-0002-0127-1959
Yu, Mengjie0000-0002-7815-4195
Buscaino, Brandon0000-0002-8662-1160
Zhu, Di0000-0003-0210-1860
Shams-Ansari, Amirhassan0000-0002-2165-7832
Shao, Linbo0000-0002-0615-7848
Zhang, Mian0000-0001-9838-3895
Lončar, Marko0000-0002-5029-5017
Additional Information:We thank C. Wang for helpful discussion. This work is supported by AFOSR FA9550-19-1-0376 (A.S.-A.); AFOSR FA9550-19-1-0310 (A.S.-A. and Y.H.); DARPA LUMOS HR0011-20-C-137 (M.Y., L.S., R.C. and M.L.); NASA 80NSSC21C0583 (M.Y. and R.C.); AFRL FA9550-21-1-0056 (N.S.); NSF ECCS-1839197 (D.Z.); ARO W911NF2010248 (Y.H.); DOE DE-SC0020376 (N.S. and M.L.); Harvard Quantum Initiative (HQI) postdoc fellowship (D.Z.); Maxim Integrated (now Analog Devices) (B.B. and J.M.K.); and Inphi (now Marvell) (B.B. and J.M.K.). N.S. acknowledges support by the AQT Intelligent Quantum Networks and Technologies (INQNET) research program. Device fabrication was performed at the Harvard University Center for Nanoscale Systems. The views, opinions and/or findings expressed are those of the author and should not be interpreted as representing the official views or policies of the Department of Defense or the US Government.
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)FA9550-19-1-0310
Air Force Office of Scientific Research (AFOSR)FA9550-19-1-0376
Army Research Office (ARO)W911NF2010248
Defense Advanced Research Projects Agency (DARPA)HR0011-20-C-137
Air Force Research Laboratory (AFRL)FA9550-21-1-0056
Department of Energy (DOE)DE-SC0020376
Harvard UniversityUNSPECIFIED
Maxim IntegratedUNSPECIFIED
AQT Intelligent Quantum Networks and Technologies (INQNET)UNSPECIFIED
Issue or Number:10
Record Number:CaltechAUTHORS:20220907-386750000
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:116748
Deposited By: Olivia Warschaw
Deposited On:15 Nov 2022 23:21
Last Modified:15 Nov 2022 23:21

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