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Variable-Phase-Shift Based High Data Rate Sub-THz FSK Transmitter Design: Theory and Implementation

Chen, Lili and Nooshabadi, Samir and Cathelin, Andreia and Afshari, Ehsan (2022) Variable-Phase-Shift Based High Data Rate Sub-THz FSK Transmitter Design: Theory and Implementation. IEEE Transactions on Microwave Theory and Techniques . ISSN 0018-9480. doi:10.1109/tmtt.2022.3205332. (In Press)

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Targeting the new generation of high data rate communication systems at sub-terahertz (THz), a fully integrated, energy and area efficient, 196 GHz frequency-shift keying (FSK) transmitter was designed and prototyped in a 55-nm SiGe process. By analyzing the transient dynamics of a loop of coupled oscillators, a new direct modulation technique for frequency modulation is presented. It is shown that an instantaneous frequency shift can be realized in theory as long as the coupling mode of the coupled oscillators loop system does not change. By controlling the phase shift in a system of tunable couplers, a 10 Gb/s single channel data rate wireless link was demonstrated, which is the first FSK wireless transmitter at sub-THz frequencies, and is 5× higher compared with all other previously published CMOS/BiCMOS wireless FSK transmitters. The achieved single channel data rate and energy efficiency per bit are comparable to other recently published sub-THz transmitters with more complicated modulation schemes like M-ary amplitude-shift keying (ASK), phase-shift keying (PSK), or quadratic-amplitude modulation (QAM).

Item Type:Article
Related URLs:
URLURL TypeDescription
Chen, Lili0000-0001-6398-2388
Nooshabadi, Samir0000-0003-1645-0009
Cathelin, Andreia0000-0003-2745-4523
Afshari, Ehsan0000-0002-4528-1788
Additional Information:This work was supported in part by Samsung Research America through the Global Research Outreach (GRO) Program. This article is an expanded version from the 2021 IEEE RFIC Symposium, Atlanta, GA, USA, June 7–9, 2021. The authors would like to thank Samsung Research America for their kind support and STMicroelectronics for chip fabrication.
Funding AgencyGrant Number
Samsung Research AmericaUNSPECIFIED
Record Number:CaltechAUTHORS:20221003-756400000.18
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:117210
Deposited By: Melissa Ray
Deposited On:05 Oct 2022 18:26
Last Modified:05 Oct 2022 18:26

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