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Transients of the photoluminescence from EHD in doped and undoped Ge

Chen, M. and Lyon, S. A. and Elliott, K. R. and Smith, D. L. and McGill, T. C. (1977) Transients of the photoluminescence from EHD in doped and undoped Ge. Il Nuovo Cimento B, 39 (2). pp. 622-627. ISSN 1826-9877. doi:10.1007/bf02725801. https://resolver.caltech.edu/CaltechAUTHORS:20221004-680171300.29

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Abstract

The decay characteristics of luminescence from EHD in pure Ge and Ge doped in the range of 10¹⁵ cm⁻³ are reported for 4.2 K and 2 K. These characteristics are found to be in agreement with calculations based on a model which includes multidrop effects and exciton diffusion


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1007/bf02725801DOIArticle
Additional Information:Work supported in part by Office of Naval Research. Received: 03 December 1976. Published: 28 October 2007. Issue Date: June 1977.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:2
DOI:10.1007/bf02725801
Record Number:CaltechAUTHORS:20221004-680171300.29
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20221004-680171300.29
Official Citation:Chen, M., Lyon, S.A., Elliott, K.R. et al. Transients of the photoluminescence from EHD in doped and undoped Ge. Nuov Cim B 39, 622–627 (1977). https://doi.org/10.1007/BF02725801
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:117250
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:12 Oct 2022 17:41
Last Modified:12 Oct 2022 17:41

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