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A DLTS study of deep levels in n-type CdTe

Collins, R. T. and Kuech, T. F. and McGill, T. C. (1982) A DLTS study of deep levels in n-type CdTe. Journal of Vacuum Science and Technology, 21 (1). pp. 191-194. ISSN 0022-5355. doi:10.1116/1.571710. https://resolver.caltech.edu/CaltechAUTHORS:COLjvst82

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Abstract

We report the results of a DLTS study on the majority carrier deep level structure of three samples of n-type CdTe and the effects on the deep level structure of indium doped CdTe due to H2 annealing. H2 annealing did not qualitatively change the deep level structure of the annealed sample. It did cause the shallow level concentration to decrease with a proportional decrease in the deep level concentrations as a result of indium out-diffusion and compensation by native defects. Levels present in all of the materials studied have been characterized and attributed to either native defects or innate chemical impurities. Other levels present in indium doped material require above band gap illumination of the sample before they are observed. A possible model proposes that these levels arise from defect complexes.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.571710DOIUNSPECIFIED
Additional Information:© 1982 American Vacuum Society. Received 13 November 1981; accepted 11 February 1982. We wish to acknowledge Marti Mäenpää for his help with these experiments, Dr. J.O. McCaldin for valuable discussions, and Rockwell International for providing some of the samples. This work was supported in part by the Army Research Office under Contract No. DAAG29-80-C-0103. One of us (TFK) wishes to acknowledge the Office of Naval Research (Contract N00014-76-C-1068) for support during this work.
Funders:
Funding AgencyGrant Number
Army Research OfficeDAAG29-80-C-0103
Office of Naval ResearchN00014-76-C-1068
Subject Keywords:N–TYPE CONDUCTORS, CADMIUM TELLURIDES, ANNEALING, INDIUM ADDITIONS, CRYSTAL DEFECTS, CHARGE CARRIERS
Issue or Number:1
DOI:10.1116/1.571710
Record Number:CaltechAUTHORS:COLjvst82
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:COLjvst82
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11787
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:29 Sep 2008 19:25
Last Modified:08 Nov 2021 22:02

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