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Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN

Okamoto, Koichi and Scherer, Axel and Kawakami, Yoichi (2005) Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN/GaN. Applied Physics Letters, 87 (16). Art. no. 161104. ISSN 0003-6951. doi:10.1063/1.2105999.

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Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaN/GaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance.

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Additional Information:©2005 American Institute of Physics (Received 29 June 2005; accepted 25 August 2005; published online 11 October 2005) The authors would like to thank Professor Sg. Fujita and Professor M. Terazima (Kyoto University) for valuable suggestions and discussions. The authors also wish to thank G. Maltezos (Caltech) for helpful discussions and reviewing the manuscript. A part of this study was supported by AFOSR for their support under Contract No. FA9550-04-1-0413.
Subject Keywords:near-field scanning optical microscopy; lenses; indium compounds; gallium compounds; III-V semiconductors; semiconductor quantum wells; high-speed optical techniques; photoluminescence
Issue or Number:16
Record Number:CaltechAUTHORS:OKAapl05a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1183
Deposited By: Archive Administrator
Deposited On:04 Jan 2006
Last Modified:08 Nov 2021 19:08

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