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Enabling Durable Ultralow-k Capacitors with Enhanced Breakdown Strength in Density-Variant Nanolattices

Kim, Min-Woo and Lifson, Max L. and Gallivan, Rebecca and Greer, Julia R. and Kim, Bong-Joong (2023) Enabling Durable Ultralow-k Capacitors with Enhanced Breakdown Strength in Density-Variant Nanolattices. Advanced Materials, 35 (6). Art. No. 2208409. ISSN 0935-9648. doi:10.1002/adma.202208409. https://resolver.caltech.edu/CaltechAUTHORS:20230202-569057000.1

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Abstract

Ultralow-k materials used in high voltage devices require mechanical resilience and electrical and dielectric stability even when subjected to mechanical loads. Existing devices with organic polymers suffer from low thermal and mechanical stability while those with inorganic porous structures struggle with poor mechanical integrity. Recently, 3D hollow-beam nanolattices have emerged as promising candidates that satisfy these requirements. However, their properties are maintained for only five stress cycles at strains below 25%. Here, we demonstrate that alumina nanolattices with different relative density distributions across their height elicit a deterministic mechanical response concomitant with a 1.5–3.3 times higher electrical breakdown strength than nanolattices with uniform density. These density-variant nanolattices exhibit an ultralow-k of ≈1.2, accompanied by complete electric and dielectric stability and mechanical recoverability over 100 cyclic compressions to 62.5% strain. We explain the enhanced insulation and long-term cyclical stability by the bi-phase deformation where the lower-density region protects the higher-density region as it is compressed before the higher-density region, allowing to simultaneously possess high strength and ductility like composites. This study highlights the superior electrical performance of the bi-phase nanolattice with a single interface in providing stable conduction and maximum breakdown strength.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1002/adma.202208409DOIArticle
ORCID:
AuthorORCID
Lifson, Max L.0000-0002-0382-182X
Gallivan, Rebecca0000-0001-6516-2180
Greer, Julia R.0000-0002-9675-1508
Kim, Bong-Joong0000-0002-5335-4342
Additional Information:B.-J.K. and J.R.G acknowledge financial support from the “GIST-Caltech Research Collaboration” grant funded by the GIST in 2020. B.-J.K acknowledges financial support from the National Research Foundation of Korea under Project Number NRF-2021R1A2C1005741 and GIST Research Institute (GRI) grant funded by the GIST in 2022. Portions of this work were conducted in the Lewis lab at Caltech. Author Contributions. M.-W.K. and M.L.L. contributed equally to this work. B.-J.K. and J.R.G. conceived the idea of this work and supervised the research at all stages. M.L.L. and R.G. fabricated the nanolattices and measured mechanical properties. M.-W.K. measured electrical and dielectric properties of the nanolattice capacitors. All authors discussed the results and wrote the paper. Data Availability Statement. The data that support the findings of this study are available in the supplementary material of this article. The authors declare no conflict of interest.
Funders:
Funding AgencyGrant Number
GIST-Caltech Research CollaborationUNSPECIFIED
National Research Foundation of KoreaNRF-2021R1A2C1005741
Issue or Number:6
DOI:10.1002/adma.202208409
Record Number:CaltechAUTHORS:20230202-569057000.1
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20230202-569057000.1
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:118992
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:02 Feb 2023 21:06
Last Modified:16 Feb 2023 00:38

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