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High-field transport and hot-electron noise in GaAs from first-principles calculations: Role of two-phonon scattering

Cheng, Peishi S. and Sun, Jiace and Sun, Shi-Ning and Choi, Alexander Y. and Minnich, Austin J. (2022) High-field transport and hot-electron noise in GaAs from first-principles calculations: Role of two-phonon scattering. Physical Review B, 106 (24). Art. No. 245201. ISSN 2469-9950. doi:10.1103/physrevb.106.245201.

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High-field charge transport in semiconductors is of fundamental interest and practical importance. While the ab initio treatment of low-field transport is well developed, the treatment of high-field transport is much less so, particularly for multiphonon processes that are reported to be relevant in GaAs. Here, we report a calculation of the high-field transport properties and current power spectral density (PSD) of hot electrons in GaAs from first principles including on-shell two-phonon (2ph) scattering. The on-shell 2ph scattering rates are found to qualitatively alter the high-field distribution function by increasing both the momentum and energy relaxation rates as well as contributing markedly to intervalley scattering. This finding reconciles a long-standing discrepancy regarding the strength of intervalley scattering in GaAs as inferred from transport and optical studies. The characteristic nonmonotonic trend of PSD with electric field is not predicted at this level of theory. Our work shows how ab initio calculations of high-field transport and noise may be used as a stringent test of the electron-phonon interaction in semiconductors.

Item Type:Article
Related URLs:
URLURL TypeDescription
Cheng, Peishi S.0000-0002-3513-9972
Sun, Jiace0000-0002-0566-2084
Sun, Shi-Ning0000-0002-5984-780X
Choi, Alexander Y.0000-0003-2006-168X
Minnich, Austin J.0000-0002-9671-9540
Additional Information:This work was supported by AFOSR under Grant No. FA9550-19-1-0321. The authors thank B. Hatanpää, D. Catherall, and T. Esho for helpful discussions.
Funding AgencyGrant Number
Air Force Office of Scientific Research (AFOSR)FA9550-19-1-0321
Issue or Number:24
Record Number:CaltechAUTHORS:20230203-893210800.6
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:119005
Deposited By: Research Services Depository
Deposited On:24 Feb 2023 20:24
Last Modified:24 Feb 2023 20:24

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