Catherall, David S. and Minnich, Austin J. (2023) High-field charge transport and noise in p-Si from first principles. Physical Review B, 107 (3). Art. No. 035201. ISSN 2469-9950. doi:10.1103/physrevb.107.035201. https://resolver.caltech.edu/CaltechAUTHORS:20230203-893210800.7
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Abstract
The parameter-free computation of charge transport properties of semiconductors is now routine owing to advances in the ab initio description of the electron-phonon interaction. Many studies focus on the low-field regime in which the carrier temperature equals the lattice temperature and the current power spectral density (PSD) is proportional to the mobility. The calculation of high-field transport and noise properties offers a stricter test of the theory as these relations no longer hold, yet few such calculations have been reported. Here, we compute the high-field mobility and PSD of hot holes in silicon from first principles at temperatures of 77 and 300 K and electric fields up to 20 kV cm⁻¹ along various crystallographic axes. We find that the calculations quantitatively reproduce experimental trends including the anisotropy and electric-field dependence of hole mobility and PSD. The experimentally observed rapid variation of energy relaxation time with electric field at cryogenic temperatures is also correctly predicted. However, as in low-field studies, absolute quantitative agreement is, in general, lacking, a discrepancy that has been attributed to inaccuracies in the calculated valence-band structure. Our paper highlights the use of high-field transport and noise properties as a rigorous test of the theory of electron-phonon interactions in semiconductors.
Item Type: | Article | |||||||||
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Additional Information: | This work was supported by the National Science Foundation under Award No. 1911926. We thank A. Choi, B. Hatanpää, P. Cheng, S-N. Sun, and J. Sun for code development and discussions. | |||||||||
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Issue or Number: | 3 | |||||||||
DOI: | 10.1103/physrevb.107.035201 | |||||||||
Record Number: | CaltechAUTHORS:20230203-893210800.7 | |||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20230203-893210800.7 | |||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
ID Code: | 119006 | |||||||||
Collection: | CaltechAUTHORS | |||||||||
Deposited By: | Research Services Depository | |||||||||
Deposited On: | 24 Feb 2023 20:23 | |||||||||
Last Modified: | 24 Feb 2023 20:23 |
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