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Selective nucleation of silicon clusters in CVD

Shi, Frank G. and Seinfeld, John H. (1992) Selective nucleation of silicon clusters in CVD. Journal of Materials Research, 7 (7). pp. 1809-1815. ISSN 0884-2914. doi:10.1557/jmr.1992.1809.

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A nucleation model is developed that includes chemical etching of atoms as an additional loss process besides thermal dissociation that competes with the process of atom addition in forming a cluster. The model has the proper qualitative features to describe observations of the evolution of cluster formation on amorphous silicon substrates in the low pressure CVD of a mixture of SiH₂Cl₂/HCl/H₂.

Item Type:Article
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Seinfeld, John H.0000-0003-1344-4068
Additional Information:The authors are grateful for useful discussions with Dr. T. Yonehara.
Issue or Number:7
Record Number:CaltechAUTHORS:20230301-144673600.3
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:119592
Deposited By: Tony Diaz
Deposited On:02 Mar 2023 18:30
Last Modified:02 Mar 2023 18:30

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