Shi, Frank G. and Seinfeld, John H. (1992) Selective nucleation of silicon clusters in CVD. Journal of Materials Research, 7 (7). pp. 1809-1815. ISSN 0884-2914. doi:10.1557/jmr.1992.1809. https://resolver.caltech.edu/CaltechAUTHORS:20230301-144673600.3
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Abstract
A nucleation model is developed that includes chemical etching of atoms as an additional loss process besides thermal dissociation that competes with the process of atom addition in forming a cluster. The model has the proper qualitative features to describe observations of the evolution of cluster formation on amorphous silicon substrates in the low pressure CVD of a mixture of SiH₂Cl₂/HCl/H₂.
| Item Type: | Article | ||||||
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| Additional Information: | The authors are grateful for useful discussions with Dr. T. Yonehara. | ||||||
| Issue or Number: | 7 | ||||||
| DOI: | 10.1557/jmr.1992.1809 | ||||||
| Record Number: | CaltechAUTHORS:20230301-144673600.3 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20230301-144673600.3 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 119592 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 02 Mar 2023 18:30 | ||||||
| Last Modified: | 02 Mar 2023 18:30 |
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