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Gas-Phase Nucleation in GaAs Thin Film Preparation by Metal Organic Chemical Vapor Deposition

Okuyama, Kikuo and Huang, David D. and Seinfeld, John H. and Tani, Naoyuki and Matsui, Isao (1992) Gas-Phase Nucleation in GaAs Thin Film Preparation by Metal Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 31 (1R). pp. 1-11. ISSN 0021-4922. doi:10.1143/jjap.31.1.

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GaAs epitaxial film growth in the metal organic chemical vapor deposition (MOCVD) horizontal reactor was analyzed by a mathematical model, which takes into consideration of vapor phase hydrodynamic and kinetic phenomena including decomposition reactions of reactants, Ga or GaAs nucleation and subsequent particle growth. The position dependent changes in mass concentrations of Ga or GaAs monomers and homogeneously nucleated Ga or GaAs particles are predicted under various substrate temperatures. The appearance of particles in the gas phase is found to be enhanced under substrate temperature exceeding about 900 K. The conditions under which the growth of the thin film is governed by the diffusive deposition of metal organic vapor and Ga monomers are determined, and the effect of homogeneously nucleated particles on the growth of thin film has been clarified. The simulation results are in good agreement with the data of van de Ven et al [J. Cryst. Growth 76 (1986) 352].

Item Type:Article
Related URLs:
URLURL TypeDescription
Okuyama, Kikuo0000-0002-1477-1442
Seinfeld, John H.0000-0003-1344-4068
Matsui, Isao0000-0002-1569-5189
Additional Information:Part of this work was supported by CVD project research of The Society of Chemical Engineers, Japan and a grant-in-aid from the Ministry of Education, Culture and Science.
Funding AgencyGrant Number
Society of Chemical Engineers (Japan)UNSPECIFIED
Ministry of Education, Culture, Sports, Science and Technology (MEXT)UNSPECIFIED
Issue or Number:1R
Record Number:CaltechAUTHORS:20230301-357560100.2
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:119596
Deposited By: Tony Diaz
Deposited On:02 Mar 2023 18:38
Last Modified:02 Mar 2023 18:38

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