Pfeiffer, L. N. and West, K. W. and Eisenstein, J. P. and Baldwin, K. W. and Gammel, P. (1992) Multiquantum well structure with an average electron mobility of 4.0×10^6 cm^2/V s. Applied Physics Letters, 61 (10). pp. 1211-1212. ISSN 0003-6951. doi:10.1063/1.107597. https://resolver.caltech.edu/CaltechAUTHORS:PFEapl92
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Abstract
We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-Å wide are symmetrically modulation doped using Si δ doping at the center of 3600-Å-wide Al0.1Ga0.9As barriers. The low field mobility of each well is 4.0×10^6 cm/V s at a density of 6.4×10^10 cm^−2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.
Item Type: | Article | |||||||||
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Additional Information: | © 1992 American Institute of Physics. Received 12 February 1992; accepted 8 July 1992. | |||||||||
Subject Keywords: | GALLIUM ARSENIDES, ALUMINUM ARSENIDES, QUANTUM WELL STRUCTURES, CRYSTAL DOPING, DOPED MATERIALS, DELTA FUNCTION, SILICON ADDITIONS, ELECTRON MOBILITY, PHYSICAL RADIATION EFFECTS, PHOTONS, MOLECULAR BEAM EPITAXY | |||||||||
Issue or Number: | 10 | |||||||||
DOI: | 10.1063/1.107597 | |||||||||
Record Number: | CaltechAUTHORS:PFEapl92 | |||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:PFEapl92 | |||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
ID Code: | 12018 | |||||||||
Collection: | CaltechAUTHORS | |||||||||
Deposited By: | Tony Diaz | |||||||||
Deposited On: | 23 Oct 2008 15:37 | |||||||||
Last Modified: | 08 Nov 2021 22:25 |
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