Hauenstein, R. J. and Schlesinger, T. E. and McGill, T. C. and Hunt, B. D. and Schowalter, L. J. (1986) Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si. Journal of Vacuum Science and Technology B, 4 (2). pp. 549-550. ISSN 1071-1023. doi:10.1116/1.583587. https://resolver.caltech.edu/CaltechAUTHORS:HAUjvstb86
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Abstract
We have made photoresponse measurements of the Schottky barrier heights of epitaxial NiSi2 on non-degenerate n-(111) Si substrates, for the cases of type A and type B epitaxy, on several samples with NiSi2 layer thicknesses ranging from 70 to 600 Å. Nominal doping in all Si substrates was about 1.5 x 10^15 cm^-3. The photoresponse measurements were performed on broad-area-coverage regions of NiSi2 on Si. No processing subsequent to growth took place on these silicide layers.
| Item Type: | Article | ||||||
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| Additional Information: | © 1986 American Vacuum Society. Received 15 August 1985; accepted 6 December 1985. The authors wish to acknowledge the support of the Defense Advanced Research Projects Agency monitored by ONR under Contract No. N00014-84-C-0083. | ||||||
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| Issue or Number: | 2 | ||||||
| DOI: | 10.1116/1.583587 | ||||||
| Record Number: | CaltechAUTHORS:HAUjvstb86 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:HAUjvstb86 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 12190 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 28 Oct 2008 20:16 | ||||||
| Last Modified: | 08 Nov 2021 22:26 |
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