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Nanomechanical Measurement of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As

Masmanidis, S. C. and Tang, H. X. and Myers, E. B. and Li, Mo and De Greve, K. and Vermeulen, G. and Van Roy, W. and Roukes, M. L. (2005) Nanomechanical Measurement of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As. Physical Review Letters, 95 (18). Art. no. 187206. ISSN 0031-9007.

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A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

Item Type:Article
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Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2005 The American Physical Society (Received 5 May 2005; published 28 October 2005) This work was supported by DARPA under grant No. DSO/SPINS-MDA 972-01-1-0024. K.D.G. acknowledges support as research assistant of the Research Fund Flanders (FWO).
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)MDA 972-01-1-0024
Fonds Wetenschappelijk Onderzoek (FWO)UNSPECIFIED
Subject Keywords:magnetostriction; magnetic anisotropy; manganese compounds; gallium arsenide; III-V semiconductors; semimagnetic semiconductors; magnetoelastic effects; ferromagnetic materials
Issue or Number:18
Record Number:CaltechAUTHORS:MASprl05
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1227
Deposited By: Archive Administrator
Deposited On:05 Jan 2006
Last Modified:02 Oct 2019 22:41

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