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Phase-locked semiconductor laser array with separate contacts

Katz, J. and Kapon, E. and Lindsey, C. and Margalit, S. and Shreter, U. and Yariv, A. (1983) Phase-locked semiconductor laser array with separate contacts. Applied Physics Letters, 43 (6). pp. 521-523. ISSN 0003-6951. doi:10.1063/1.94424.

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A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-µm-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.

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Additional Information:Copyright © 1983 American Institute of Physics. Received 19 April 1983; accepted 20 June 1983. The research described in this letter was performed jointly by the Jet Propulsion Laboratory and the Applied Physics Department, California Institute of Technology, under contracts with the National Aeronautics and Space Administration, the Office of Naval Research and the National Science Foundation.
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Office of Naval ResearchUNSPECIFIED
National Science FoundationUNSPECIFIED
Subject Keywords:semiconductor lasers, fabrication, threshold energy, electric currents, liquid phase epitaxy, gallium arsenides, substrates, pulses
Issue or Number:6
Record Number:CaltechAUTHORS:KATapl83b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12340
Deposited By: Archive Administrator
Deposited On:12 Nov 2008 06:34
Last Modified:08 Nov 2021 22:27

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