Katz, J. and Margalit, S. and Wilt, D. and Chen, P. C. and Yariv, A. (1980) Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents. Applied Physics Letters, 37 (11). pp. 987-989. ISSN 0003-6951. doi:10.1063/1.91743. https://resolver.caltech.edu/CaltechAUTHORS:KATapl80b
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Abstract
A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 µm long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175° C. They emit more than 12 mW/facet of optical power without any kinks.
| Item Type: | Article | |||||||||
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| Additional Information: | Copyright © 1980 American Institute of Physics. Received 25 August 1980; accepted for publication 25 September 1980. This research was supported by the National Science Foundation and the Office of Naval Research under the Optical Communication Program. | |||||||||
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| Subject Keywords: | SEMICONDUCTOR LASERS, CRYSTAL GROWTH, ELECTRIC CURRENTS, EPITAXY, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, WAVEGUIDES, FABRICATION, OSCILLATION MODES, EFFICIENCY, HIGH TEMPERATURE | |||||||||
| Issue or Number: | 11 | |||||||||
| DOI: | 10.1063/1.91743 | |||||||||
| Record Number: | CaltechAUTHORS:KATapl80b | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:KATapl80b | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 12341 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Archive Administrator | |||||||||
| Deposited On: | 12 Nov 2008 06:45 | |||||||||
| Last Modified: | 08 Nov 2021 22:27 |
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