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Proton-implanted optical waveguide detectors in GaAs

Stoll, H. and Yariv, A. and Hunsperger, R. G. and Tangonan, G. L. (1973) Proton-implanted optical waveguide detectors in GaAs. Applied Physics Letters, 23 (12). pp. 664-665. ISSN 0003-6951. doi:10.1063/1.1654783.

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Defect levels introduced by implanting GaAs with high-energy protons give rise to optical absorption at wavelengths greater than that of the normal absorption edge at 0.9 µ. Optical waveguide detectors may be fabricated by taking advantage of this absorption mechanism in the presence of a Schottky barrier depletion layer. Detector response times less than 200 ns and external quantum efficiencies of 16% have been observed.

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Additional Information:© 1973 American Institute of Physics. Received 17 August 1973. The authors would like to thank Dr. W.C. Holton of Texas Instruments for providing the epitaxial GaAs material.
Issue or Number:12
Record Number:CaltechAUTHORS:STOapl73
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12380
Deposited By: Archive Administrator
Deposited On:14 Nov 2008 07:41
Last Modified:08 Nov 2021 22:28

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