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A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

De Blauwe, J. W. and Ostraat, M. L. and Green, M. L. and Weber, G. and Sorsch, T. and Kerber, A. and Klemens, F. and Cirelli, R. and Ferry, E. and Grazul, J. L. and Baumann, F. and Kim, Y. and Mansfield, W. and Bude, J. and Lee, J. T. C. and Hillenius, S. J. and Flagan, R. C. and Atwater, H. A. (2000) A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications. In: International Electron Devices Meeting, 2000. IEDM Technical Digest. San Francisco, CA, 10-13 December 2000. IEEE , Piscataway, NJ, pp. 683-686. ISBN 0-7803-6438-4.

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This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol-nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>l0^5 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

Item Type:Book Section
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Flagan, R. C.0000-0001-5690-770X
Atwater, H. A.0000-0001-9435-0201
Additional Information:© 2000 IEEE. Reprinted with permission. Meeting Date: 12/10/2000 - 12/13/2000. The authors would like to thanks Dr. David Abusch-Magder, Dr. Ken Evans-Lutterodt, Dr. Marco Mastrapasqua, Dr. Mark Brongersma and Dr. Doug Bell for their helpful contributions and discussions.
Subject Keywords:MOSFET; aerosols; nanostructured materials; semiconductor storage; aerosol-nanocrystal floating-gate FET; electrical characteristics; fabrication; nonvolatile memory; structural characteristics
Record Number:CaltechAUTHORS:DEBiedm00
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12452
Deposited On:12 Dec 2008 00:06
Last Modified:08 Nov 2021 22:28

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