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Substrate orientation dependence of enhanced epitaxial regrowth of silicon

Ho, K. T. and Suni, I. and Nicolet, M-A. (1984) Substrate orientation dependence of enhanced epitaxial regrowth of silicon. Journal of Applied Physics, 56 (4). pp. 1207-1212. ISSN 0021-8979. doi:10.1063/1.334050.

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This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the <100> to the <110> and <111> orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 °C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1±0.9. Boron produces a higher enhancement factor of 12.2±1.2, except in the case of <100>. Implications of the results on various growth models are considered. The crystalline quality of regrown <111> layers is improved in the doped samples.

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Additional Information:Copyright © 1984 American Institute of Physics. Received 25 August 1983; accepted 19 October 1983. The authors would like to thank Dr. S.S. Lau (University of California, San Diego) for valuable discussions. The implantation part of this study was financially supported by the U.S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Burger).
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Department of EnergyUNSPECIFIED
Subject Keywords:orientation, annealing, recrystallization, substrates, silicon, phosphorus ions, boron ions, high temperature, epitaxy, ion implantation, doped materials, crystal doping
Issue or Number:4
Record Number:CaltechAUTHORS:HOKjap84
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12603
Deposited By: Archive Administrator
Deposited On:15 Dec 2008 18:11
Last Modified:08 Nov 2021 22:30

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