A Caltech Library Service

Schottky barriers on compound semiconductors: The role of the anion

McCaldin, J. O. and McGill, T. C. and Mead, C. A. (1976) Schottky barriers on compound semiconductors: The role of the anion. Journal of Vacuum Science and Technology, 13 (4). pp. 802-806. ISSN 0022-5355. doi:10.1116/1.568993.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


The Schottky barrier for holes on common III–V and II–VI semiconductors contacted by Au is shown to depend only on the anion. Compilation of the experimental data shows that compound semiconductors with the same anion but different cations possess very similar values for the the Au Schottky barrier for holes. Further, the data show that the Pauling electronegativity of the anion provides a useful ordering parameter for the height of the Schottky barrier. This correlation is compared with analogous barrier data on rocksalt and layer structures as well as earlier results for the semiconductor–vacuum interface.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© 1976 American Vacuum Society. Received 23 February 1976. Supported in part by Office of Naval Research (D. Ferry). [T.C.M. was an] Alfred P. Sloan Foundation Fellow.
Funding AgencyGrant Number
Office of Naval ResearchUNSPECIFIED
Alfred P. Sloan FoundationUNSPECIFIED
Issue or Number:4
Record Number:CaltechAUTHORS:MCCjvst76
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12677
Deposited By: Archive Administrator
Deposited On:19 Dec 2008 05:47
Last Modified:08 Nov 2021 22:32

Repository Staff Only: item control page