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Atom movements occurring at solid metal-semiconductor interfaces

McCaldin, J. O. (1974) Atom movements occurring at solid metal-semiconductor interfaces. Journal of Vacuum Science and Technology, 11 (6). pp. 990-995. ISSN 0022-5355. doi:10.1116/1.1318718.

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Solid metal-semiconductor interfaces often undergo chemical reaction at rather low temperatures, in some cases not much above room temperature. After some general discussion of these reactions, more detailed consideration is given to simple noncompound-forming systems, and, in particular, to the Si-Al, Ge-Al, and Si-Au systems. Diffusive transport of Si or Ge in these solid metallizations is very rapid, though the converse process, diffusion of metal in solid Si or Ge, is usually so slow as to be negligible. The interface reaction itself is less well understood but is becoming controllable in intrinsically favorable cases like Ge-Al and in other cases by more sophisticated means.

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Additional Information:© 1974 American Vacuum Society. Received 26 August 1974. The author wishes to thank H. Sankur for permission to quote unpublished work, K. Evans for scanning electron microscopy, and J. Best and R. Etchells for laboratory assistance. Many ideas and results presented are from the work of J.W. Mayer and associates. Work supported in part by the Office of Naval Research and NASA through the Jet Propulsion Laboratory of the California Institute of Technology.
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Office of Naval ResearchUNSPECIFIED
Issue or Number:6
Record Number:CaltechAUTHORS:MCCjvst74
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12678
Deposited By: Archive Administrator
Deposited On:19 Dec 2008 05:55
Last Modified:08 Nov 2021 22:32

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