McCaldin, J. O. (1990) Current approaches to pn junctions in wider band gap II–VI semiconductors. Journal of Vacuum Science and Technology A, 8 (2). pp. 1188-1193. ISSN 0734-2101. doi:10.1116/1.576943. https://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90
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Abstract
Long-standing problems to make junctions in wider band gap semiconductors, especially II–VIs, are being restudied today by new low-temperature epitaxial growth methods, which may lead to current-injecting devices suited to light emission. This paper reviews various approaches briefly, with particular emphasis on heterojunctions and methods to control dopants. A few of the many possible heterojunctions are favored by small offset barriers, but are not without other problems. New dopants, besides the much-studied Li, are being introduced in new ways, in the effort to attain reproducibility and stability.
Item Type: | Article | ||||||
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Additional Information: | © 1990 American Vacuum Society. Received 18 September 1989; accepted 10 November 1989. | ||||||
Subject Keywords: | JUNCTIONS, II–VI SEMICONDUCTORS, EPITAXIAL LAYERS, HETEROJUNCTIONS, DOPED MATERIALS | ||||||
Issue or Number: | 2 | ||||||
DOI: | 10.1116/1.576943 | ||||||
Record Number: | CaltechAUTHORS:MCCjvsta90 | ||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90 | ||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
ID Code: | 12679 | ||||||
Collection: | CaltechAUTHORS | ||||||
Deposited By: | Archive Administrator | ||||||
Deposited On: | 19 Dec 2008 06:14 | ||||||
Last Modified: | 08 Nov 2021 22:32 |
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