Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions

Abstract

From considerations of dopability, band offset, and lattice match, we find that of the various heterojunctions containing II–VI compounds, the n-AlSb/p-ZnTe heterojunction has the most promising properties for fabricating visible light emitters. The materials lattice match to 0.5%. Experimental evidence and theoretical predictions for the band offset blocking minority carrier injection indicate a range from zero to 0.3 eV maximum. This range of values is the lowest for heterojunctions involving wide-gap II–VI's. Substantial electron injection into the p-ZnTe should be possible. Control of doping may suffice to suppress undesired hole current originating in the ZnTe.