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Phosphine Functionalization of GaAs(111)A Surfaces

Traub, Matthew C. and Biteen, Julie S. and Michalak, David J. and Webb, Lauren J. and Brunschwig, Bruce S. and Lewis, Nathan S. (2008) Phosphine Functionalization of GaAs(111)A Surfaces. Journal of Physical Chemistry C, 112 (47). pp. 18467-18473. ISSN 1932-7447.

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Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface with PCl3. The presence of phosphorus on each functionalized surface was confirmed by X-ray photoelectron spectroscopy. High-resolution, soft X-ray photoelectron spectroscopy was used to evaluate the As and Ga 3d regions of such surfaces. On PEt3 treated surfaces, the Ga 3d spectra exhibited a bulk Ga peak as well as peaks that were shifted to 0.35, 0.92 and 1.86 eV higher binding energy. These peaks were assigned to residual Cl-terminated Ga surface sites, surficial Ga2O and surficial Ga2O3, respectively. For PCl3-treated surfaces, the Ga 3d spectra displayed peaks ascribable to bulk Ga(As), Ga2O, and Ga2O3, as well as a peak shifted 0.30 eV to higher binding energy relative to the bulk signal. A peak corresponding to Ga(OH)3, observed on the Cl-terminated surface, was absent from all of the phosphine-functionalized surfaces. After reaction of the Cl-terminated GaAs(111)A surface with PCl3 or PEt3, the As 3d spectral region was free of As oxides and As0. Although native oxide-terminated GaAs surfaces were free of As oxides after reaction with PCl3, such surfaces contained detectable amounts of As0. Photoluminescence measurements indicted that phosphine-functionalized surfaces prepared from Cl-terminated GaAs(111)A surfaces had better electrical properties than the native-oxide capped GaAs(111)A surface, while the native-oxide covered surface treated with PCl3 showed no enhancement in PL intensity.

Item Type:Article
Related URLs:
URLURL TypeDescription
Biteen, Julie S.0000-0003-2038-6484
Michalak, David J.0000-0002-1226-608X
Webb, Lauren J.0000-0001-9999-5500
Brunschwig, Bruce S.0000-0002-6135-6727
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2008 American Chemical Society. Received: May 6, 2008; Revised Manuscript Received: September 8, 2008. Publication Date (Web): October 31, 2008. We gratefully acknowledge the Department of Energy, Office of Basic Energy Sciences, for support of this work. The research was carried out in part at the National Synchrotron Light Source, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Division of Materials Sciences and Division of Chemical Sciences, under Contract No. DE-AC02-98CH10886. This research was carried out in part at the Molecular Materials Research Center of the Beckman Institute of the California Institute of Technology. We thank Michael Sullivan for use of the N2(g)-purged glovebox at the NSLS.
Funding AgencyGrant Number
Department of Energy (DOE)DE-AC02-98CH10886
Issue or Number:47
Record Number:CaltechAUTHORS:TRAjpcc08
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12759
Deposited By: Archive Administrator
Deposited On:22 Dec 2008 22:52
Last Modified:17 Nov 2020 00:49

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