PlasMOStor: A metal-oxide-Si field effect plasmonic modulator

Abstract

Realization of chip-based all-optical and optoelectronic computational networks will require ultracompact Si-compatible modulators, ideally comprising dimensions, materials, and functionality similar to electronic complementary metal−oxide−semiconductor (CMOS) components. Here we demonstrate such a modulator, based on field-effect modulation of plasmon waveguide modes in a MOS geometry. Near-infrared transmission between an optical source and drain is controlled by a gate voltage that drives the MOS into accumulation. Using the gate oxide as an optical channel, electro-optic modulation is achieved in device volumes of half of a cubic wavelength with femtojoule switching energies and the potential for gigahertz modulation frequencies.