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Competing failure mechanisms in thin films: Application to layer transfer

Ponson, L. and Diest, K. and Atwater, H. A. and Ravichandran, G. and Bhattacharya, K. (2009) Competing failure mechanisms in thin films: Application to layer transfer. Journal of Applied Physics, 105 (7). Art. No. 073514. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20090821-125551614

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Abstract

We investigate the origin of transverse cracks often observed in thin films obtained by the layer transfer technique. During this process, two crystals bonded to each other containing a weak plane produced by ion implantation are heated to let a thin layer of one of the material on the other. The level of stress imposed on the film during the heating phase due to the mismatch of thermal expansion coefficients of the substrate and the film is shown to be the dominent factor in determining the quality of the transferred layer. In particular, it is shown that if the film is submitted to a tensile stress, the microcracks produced by ion implantation are not stable and deviate from the plane of implantation making the layer transfer process impossible. However, if the compressive stress exceeds a threshold value, after layer transfer, the film can buckle and delaminate, leading to transverse cracks induced by bending. As a result, we show that the imposed stress σ_m —- or equivalently the heating temperature -— must be within the range −σ_c<σ_m<0 to produce an intact thin film where σ_c depends on the interfacial fracture energy and the size of defects at the interface between film and substrate.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.3078801DOIArticle
http://link.aip.org/link/?JAPIAU/105/073514/1PublisherArticle
ORCID:
AuthorORCID
Atwater, H. A.0000-0001-9435-0201
Bhattacharya, K.0000-0003-2908-5469
Additional Information:©2009 American Institute of Physics. Received 22 October 2008; accepted 29 December 2008; published 7 April 2009. This work has been supported by the Center for the Science and Engineering of Materials (CSEM).
Group:Kavli Nanoscience Institute, GALCIT
Funders:
Funding AgencyGrant Number
NSFUNSPECIFIED
Subject Keywords:bending, buckling; compressibility; delamination; failure (mechanical); fracture; ion implantation; microcracks; tensile strength; thermal expansion; thin films
Issue or Number:7
Record Number:CaltechAUTHORS:20090821-125551614
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20090821-125551614
Official Citation:Competing failure mechanisms in thin films: Application to layer transfer L. Ponson, K. Diest, H. A. Atwater, G. Ravichandran, and K. Bhattacharya, J. Appl. Phys. 105, 073514 (2009), DOI:10.1063/1.3078801
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:15232
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:09 Sep 2009 22:05
Last Modified:27 Sep 2017 23:57

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