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Electrically pumped hybrid evanescent Si/InGaAsP lasers

Sun, Xiankai and Zadok, Avi and Shearn, Michael J. and Diest, Kenneth A. and Ghaffari, Alireza and Atwater, Harry A. and Scherer, Axel and Yariv, Amnon (2009) Electrically pumped hybrid evanescent Si/InGaAsP lasers. Optics Letters, 34 (9). pp. 1345-1347. ISSN 0146-9592. doi:10.1364/OL.34.001345.

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Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-μm-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15°C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm^2. Continuous wave laser operation was obtained up to 45°C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

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Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2009 Optical Society of America. Received January 22, 2009; revised March 16, 2009; accepted March 26, 2009; posted March 30, 2009 (Doc. ID 106493); published April 21, 2009. This work was supported by Defense Advanced Research Projects Agency (DARPA) contracts N66001- 07-1-2058 and HR0011-04-1-0054, the U.S. Air Force Office of Scientific Research (AFOSR) Grant FA9550- 06-1-0480, and the Center for Science and Engineering of Materials, a National Science Foundation (NSF) Materials Research Science and Engineering Center at Caltech. The authors thank the Kavli Nano-Institute, Caltech, for supporting fabrication. A. Zadok acknowledges postdoctoral fellowships from the Center for the Physics of Information, Caltech, and the Rothschild fellowship from Yad-Hanadiv Foundation, Israel. M. J. Shearn thanks the NSF Graduate Research Fellowship program. OCIS codes: 250.5960, 250.5300.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)N6600107-1-2058
Defense Advanced Research Projects Agency (DARPA)HR0011-04-1-0054
Air Force Office of Scientific Research (AFOSR)FA955006-1-0480
Center for the Physics of Information, CaltechUNSPECIFIED
Yad-Hanadiv FoundationUNSPECIFIED
Kavli Nanoscience InstituteUNSPECIFIED
Issue or Number:9
Record Number:CaltechAUTHORS:20090824-100252960
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Official Citation:Xiankai Sun, Avi Zadok, Michael J. Shearn, Kenneth A. Diest, Alireza Ghaffari, Harry A. Atwater, Axel Scherer, and Amnon Yariv, "Electrically pumped hybrid evanescent Si/InGaAsP lasers," Opt. Lett. 34, 1345-1347 (2009)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:15262
Deposited By: Tony Diaz
Deposited On:25 Aug 2009 22:28
Last Modified:08 Nov 2021 23:17

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