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Room temperature negative differential resistance of a monolayer molecular rotor device

Xue, Mei and Kabehie, Sanaz and Stieg, Adam Z. and Tkatchouk, Ekaterina and Benitez, Diego and Stephenson, Rachel M. and Goddard, William A. and Zink, Jeffrey I. and Wang, Kang L. (2009) Room temperature negative differential resistance of a monolayer molecular rotor device. Applied Physics Letters, 95 (9). Art. No. 093503. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20090923-143137602

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Abstract

An electrically driven molecular rotor device comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly doped P+Si substrate was fabricated. Current-voltage spectroscopy revealed a temperature-dependent negative differential resistance (NDR) associated with the device. Time-dependent density functional theory suggests the source of the observed NDR to be redox-induced ligand rotation around the copper metal center, an explanation consistent with the proposed energy diagram of the device. An observed temperature dependence of the NDR behavior further supports this hypothesis.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.3222861DOIArticle
http://link.aip.org/link/?APPLAB/95/093503/1PublisherArticle
ORCID:
AuthorORCID
Goddard, William A.0000-0003-0097-5716
Additional Information:©2009 American Institute of Physics. Received 17 June 2009; accepted 12 August 2009; published 2 September 2009. The authors would like to thank the FCRP-FENA center for support.
Funders:
Funding AgencyGrant Number
Research CorporationUNSPECIFIED
FCRP-FENA centerUNSPECIFIED
Subject Keywords:copper compounds; density functional theory; electrodes; gold; molecular electronics; monolayers; negative resistance; oxidation; reduction (chemical); rotors; silicon
Other Numbering System:
Other Numbering System NameOther Numbering System ID
WAG0820
Issue or Number:9
Classification Code:PACS: 85.65.+h Molecular electronic devices, 73.61.Ng Electrical properties of insulators (thin films), 72.20.Ht High-field transport and nonlinear effects (semiconductors/insulators)
Record Number:CaltechAUTHORS:20090923-143137602
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20090923-143137602
Official Citation:Room temperature negative differential resistance of a monolayer molecular rotor device Mei Xue, Sanaz Kabehie, Adam Z. Stieg, Ekaterina Tkatchouk, Diego Benitez, Rachel M. Stephenson, William A. Goddard, Jeffrey I. Zink, and Kang L. Wang, Appl. Phys. Lett. 95, 093503 (2009), DOI:10.1063/1.3222861
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:16034
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:02 Oct 2009 17:26
Last Modified:30 Jul 2018 16:43

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