CaltechAUTHORS
  A Caltech Library Service

Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities

Chueh, William C. and Haile, Sossina M. (2009) Electrochemical studies of capacitance in cerium oxide thin films and its relationship to anionic and electronic defect densities. Physical Chemistry Chemical Physics, 11 (37). pp. 8144-8148. ISSN 1463-9076. https://resolver.caltech.edu/CaltechAUTHORS:20090925-095034779

[img]
Preview
PDF - Published Version
See Usage Policy.

649Kb

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20090925-095034779

Abstract

Small polaron carrier density in epitaxial, doped CeO_2 thin films under low oxygen partial pressure was determined from electrochemically-measured capacitance after accounting for interfacial effects and shown to agree well with bulk values.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1039/b910903jDOIArticle
http://www.rsc.org/publishing/journals/CP/article.asp?doi=b910903jPublisherArticle
ORCID:
AuthorORCID
Haile, Sossina M.0000-0002-5293-6252
Additional Information:This journal is © the Owner Societies 2009. Received 3rd June 2009, Accepted 14th July 2009. First published as an Advance Article on the web 27th July 2009. The authors gratefully acknowledge the National Science Foundation (DMR-0604004) for funding and Dr Youli Li at the University of California, Santa Barbara for assistance with thin film X-ray diffraction experiments.
Funders:
Funding AgencyGrant Number
NSFDMR-0604004
Issue or Number:37
Record Number:CaltechAUTHORS:20090925-095034779
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20090925-095034779
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:16052
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:05 Oct 2009 17:05
Last Modified:03 Oct 2019 01:07

Repository Staff Only: item control page