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Depletion Layers and Domain Walls in Semiconducting Ferroelectric Thin Films

Xiao, Yu and Shenoy, Vivek B. and Bhattacharya, Kaushik (2005) Depletion Layers and Domain Walls in Semiconducting Ferroelectric Thin Films. Physical Review Letters, 95 (24). Art. No. 247603. ISSN 0031-9007.

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Commonly used ferroelectric perovskites are also wide-band-gap semiconductors. In such materials, the polarization and the space-charge distribution are intimately coupled, and this Letter studies them simultaneously with no a priori ansatz on either. In particular, we study the structure of domain walls and the depletion layers that form at the metal-ferroelectric interfaces. We find the coupling between polarization and space charges leads to the formation of charge double layers at the 90° domain walls, which, like the depletion layers, are also decorated by defects like oxygen vacancies. In contrast, the 180° domain walls do not interact with the defects or space charges. Implications of these results to domain switching and fatigue in ferroelectric devices are discussed.

Item Type:Article
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Bhattacharya, Kaushik0000-0003-2908-5469
Additional Information:©2005 The American Physical Society (Received 27 August 2005; published 9 December 2005) We gratefully acknowledge the discussions with Jim Scott and Wei Zhang, and the financial support of the US Army Research Office through the MURI Grant No. DAAD 19-01-1-0517 and National Science Foundation through Grants No. CMS-0093714 and No. CMS-0210095.
Funding AgencyGrant Number
Army Research Office (ARO)DAAD 19-01-1-0517
Subject Keywords:ferroelectric thin films; ferroelectric semiconductors; electric domain walls; dielectric polarisation; space charge; barium compounds; wide band gap semiconductors
Issue or Number:24
Record Number:CaltechAUTHORS:XIAprl05
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1652
Deposited By: Archive Administrator
Deposited On:09 Feb 2006
Last Modified:02 Oct 2019 22:45

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